My personal group page is www.feezellgroup.com
B.S. in Electrical and Computer Engineering, University of California, Irvine
M.S. in Electrical and Computer Engineering, University of California, Santa Barbara
Ph.D. in Electrical and Computer Engineering, University of California, Santa Barbara
Prior to joining UNM, Daniel Feezell was a Project Scientist in the Solid-State Lighting and Energy Center at the University of California Santa Barbara (UCSB) from 2010-2012. Working in the research group of Prof. Shuji Nakamura, he directed projects on nonpolar and semipolar light-emitting diodes (LEDs) and laser diodes. A significant accomplishment during this period includes the first demonstration of a nonpolar GaN-based vertical-cavity surface-emitting laser. From 2008-2010, Dr. Feezell was a Senior Device Scientist and the first employee at Soraa, Inc., where he developed high-performance GaN-based laser diodes and LEDs.
Dr. Feezell received the Ph.D. degree in 2005 under the direction of Prof. Larry Coldren at the University of California Santa Barbara. He developed monolithic 1.31 – 1.55 µm InP-based vertical-cavity surface-emitting lasers with novel optical apertures, leading to differential efficiencies above 60%. From 2005-2008, Dr. Feezell held a postdoctoral position at UCSB developing nonpolar GaN-based laser diodes. For his role in the achievement of the first nonpolar GaN-based edge-emitting laser diodes he received the 30th Annual Japanese Journal of Applied Physics Paper Award. He is the author or co-author of more than 60 peer-reviewed conference and journal publications, and has received several patents.
Epitaxial growth, fabrication, and characterization of group III-nitride materials and devices, including nonpolar/semipolar orientations. Solid-state lighting and high-efficiency LEDs. Visible edge-emitting and vertical-cavity surface-emitting lasers. III-nitride power electronics. Nonpolar intersubband photodetectors. Nanoscale epitaxial growth.
1. D. Feezell, Y. Sharma, and S. Krishna, “Optical Properties of Nonpolar III-Nitrides for Intersubband Photodetectors,” J. Appl. Phys. 113, 133103 (2013). 2. D. Feezell, J. Speck, S. DenBaars, and S. Nakamura “Properties and Performance of Semipolar (2021) Group III Nitride Light-Emitting Diodes,” J. Disp. Tech. 9, 190 (2013). 3. A. Rishinaramangalam, M. Fairchild, S. Hersee, G. Balakrishnan, and D. Feezell, “Three-Dimensional GaN Templates for Molecular Beam Epitaxy of Nonpolar InGaN/GaN Coaxial Light-Emitting Diodes,” J. Vac. Sci. Technol. B 31, 03C107 (2013). 4. C. Holder, J. Speck, S. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5, 092104 (2012). 5. D. Feezell, M. Schmidt, R. Farrell, K. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura, “AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46, L284 (2007). Book Chapter: D. Feezell and S. Nakamura, "Nonpolar and Semipolar Group III-Nitride Lasers" - in Semiconductor lasers: Fundamentals and applications, Edited by A. Baranov and E Tournie, ISBN13: 9780857091215 (Link)